Profile
Nobel Laureate Hiroshi Amano: Will continue to change the world with GaN Hiroshi Amano, a professor at Nagoya University, was selected for the Nobel Prize in Physics for his invention of the blue light-emitting diode (LED), which has made great contributions to the world. After winning the award, he continued to invest in GaN research, looking forward to continuing to change the world through GaN devices, and was invited to share the latest research results with global industry-university-research professionals at the Hon Hai NExT Forum The market share exceeds 42%, and the prospect of GaN is promising Market research institutions pointed out that the market size of power components made of GaN alone has grown from only tens of millions of dollars a few years ago to nearly 14 billion dollars in 2020, and it accounts for more than 42% of the overall compound semiconductor device. It is estimated that in 2025, it can be expected to reach a scale of 18.1 billion US dollars, with a compound annual growth rate of 5.6%. The prospect is very promising. Two stages of GaN development: from heterogeneous substrate to GaN on GaN At this stage, GaN on sapphire (sapphire), GaN on Si, GaN on SiC and other heterogeneous basic forms will continue to dominate the substrate market for some time. However, wide-gap semiconductors like GaN, with their high electron mobility and wide-gap energy, can operate at high voltages and high temperatures, such as in automotive applications. Compared with SiC (silicon carbide), GaN has higher dielectric strength and higher electron mobility, so all indicators are greater than SiC, showing that GaN power components have excellent performance. Therefore, the use of GaN materials as substrates for power electronic components is not limited to academia, and many large companies in the field of microelectronics are also investing in research and development of GaN solutions. Because of its very large operating frequency range, the reason why GaN can be successfully used as a substrate material for high-performance applications is mainly the result of extensive research on the feasibility of integrating GaN substrate components with CMOS components, such as LEDs, HEMTs, etc. Taking HEMTs (High Electron Movement Transistors) as an example, GaN has advantages that silicon cannot achieve, especially it has a higher critical electric field, which makes it very attractive for power semiconductor components, and it has very good conduction impedance and smaller capacitance than silicon switches, thus making GaN HEMTs particularly suitable for high-speed switching. New weapons against viruses from blue LEDs to deep ultraviolet light? As for LEDs, high-quality gallium nitride crystals were synthesized with "low-temperature deposition buffer layer technology", and blue light-emitting diodes were developed with the pn structure of gallium nitride, making further breakthroughs in scientific research and technological development. Shift the focus of research from blue LEDs to UV LEDs. The UV-C LED products developed by Hiroshi Amano can average the wavelength intensity to achieve better sterilization ability. The high efficiency of deep ultraviolet LED (DUV LED) products is mainly to improve the external quantum efficiency, which mainly includes three factors: internal quantum efficiency, electron injection efficiency and light output efficiency.
Forum Role: Participant
Topics Started: 0
Replies Created: 0